5A,650V N-Channel Power
Mosfet
FEATURES
RDS(ON) =2.
4Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 6.
5 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL5N65F
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source
voltage
VGSS
Gate -Source
voltage
ID
IDM EAS EAR dv/dt
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient
θJA Junction to Ambient
θJC Junction t...