6A,800V N-Channel Power
Mosfet
FEATURES
6A, 800V, RDS(on) = 2.
5Ω @VGS = 10 V Improved dv/dt Capability Fast Switching 100% Avalanche Tested
Pb
Lead-free
Production specification
BL6N80F
ITO-220AB
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source
voltage
VGSS
Gate -Source
voltage
ID
IDM EAS EAR dv/dt
Continuous Drain Current
Pulsed Drain Current Avalanche Energy
Peak Diode Recovery dv/dt
Single Pulsed Repetitive
PD Power Dissipation
θJA Junction to Ambient
θJC Junction to Case
TJ Junction Temperature
TOPR, Tstg Operating and Storage Temperature
Value 800
±30 6 22 680 15.
8 4.
5 51 62.
5
2.
45
+150
-55 to +150
Units V V A A mJ V/ns ...