Production specification
N-Channel Enhancement Mode Field Effect Transistor BL9N20
FEATURES
TrenchFET Power
MOSFETS.
175℃ Junction Temperature.
New Low Thermal Resistance Package.
Pb
Lead-free
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
VDS Drain-Source
Voltage
200
VGS Gate -Source
Voltage
±20
ID
Continuous Drain Current(TJ=175℃)
TC=25℃ TC=125℃
9 5.
2
IDM Pulsed Drain Current IAR Avalanche Current
10 7
PD
Power Dissipation at TC=25℃ TA=25℃(Note1)
EAS RthJA
Single Pulse Avalanche Energy L = 0.
1 Mh(Note2)
Junction-to-Ambient (PCB Mount)c
RthJC
Junction-to-Case (Drain)
Tj Tstg
Operating Junction and...