Part Number
|
BLA6G1011L-200RG |
Manufacturer
|
Ampleon |
Description
|
Power LDMOS transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLA6G1011-200R; BLA6G1011L(S)-200RG
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product pr...
|
Datasheet
|
BLA6G1011L-200RG
|
Overview
BLA6G1011-200R; BLA6G1011L(S)-200RG
Power LDMOS transistor
Rev.
6 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1.
Test information
Typical RF performance at Tcase = 25 C.
Test signal
f
(MHz)
VDS PL
Gp
D tr
(V) (W) (dB) (%) (ns)
Typical RF performance in a class-AB production test circuit for SOT502A
pulsed RF
1030 to 1090 28 200 20
65 10
Typical RF performance in a Gullwing application for SOT502C and SOT502D
pulsed RF
1030 to 1090 28 200 20
65 15
tf (ns)
6
6
1.
2 Features and benefits
Typical pulsed RF performance at frequencies...
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