Part Number
|
BLC6G20-110 |
Manufacturer
|
NXP |
Description
|
UHF power LDMOS transistor |
Published
|
Aug 17, 2007 |
Detailed Description
|
www.DataSheet4U.com
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data shee...
|
Datasheet
|
BLC6G20-110
|
Overview
www.
DataSheet4U.
com
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
Rev.
01 — 30 January 2006 Objective data sheet
1.
Product profile
1.
1 General description
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f (MHz) CW GSM EDGE 2-carrier W-CDMA VDS (V) PL (W) 100 48 (AV) 25 (AV) Gp (dB) 17 17.
5 18 ηD (%) 51 40 32 ACPR400 (dBc) −60 ACPR600 (dBc) −70 EVM (%) 2.
1 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1]
1930 to 1990 28 1930 to 1990 28 1930 to 1990 28
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at...
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