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DataSheet4U.
com BLC6G22-130; BLC6G22LS-130 UHF power LDMOS transistor Rev.
01 — 30 January 2006 Objective data sheet 1.
Product profile 1.
1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) Gp (W) 30 (dB) 16 ηD (%) 31 IMD3 ACPR (dBc) (dBc) −37 [1] −40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz CAUTION This device is sensitive to ElectroStatic ...

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