BLC8G20LS-400AV Power LDMOS transistor Rev.
4 — 24 November 2017 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.
4 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 32 85 15.
5 44 31 [1] 1930 to 1990 32 85 15.
5 44 35 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPC...

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