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BLC8G27LS-210PV

Part Number BLC8G27LS-210PV
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLC8G27LS-210PV Power LDMOS transistor Rev. 4 — 24 November 2017 Product data sheet 1. Product profile 1.1 General de...
Datasheet BLC8G27LS-210PV




Overview
BLC8G27LS-210PV Power LDMOS transistor Rev.
4 — 24 November 2017 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1730 28 65 17 30 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
2 Features and benefits  Excellent ruggedn...






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