Part Number
|
BLC9G22XS-400AVT |
Manufacturer
|
Ampleon |
Description
|
Power LDMOS transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLC9G22XS-400AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General d...
|
Datasheet
|
BLC9G22XS-400AVT
|
Overview
BLC9G22XS-400AVT
Power LDMOS transistor
Rev.
3 — 24 November 2017
Product data sheet
1.
Product profile
1.
1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 32 V; IDq = 810 mA (main); VGS(amp)peak = 0.
7 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
2110 to 2200
32
87
15.
3 45
34 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
6 dB at 0.
01 % probability o...
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