Part Number
|
BLF10M6160 |
Manufacturer
|
NXP |
Description
|
Power LDMOS transistor |
Published
|
Jan 27, 2016 |
Detailed Description
|
BLF10M6160; BLF10M6LS160
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 Gene...
|
Datasheet
|
BLF10M6160
|
Overview
BLF10M6160; BLF10M6LS160
Power LDMOS transistor
Rev.
1 — 24 June 2014
Product data sheet
1.
Product profile
1.
1 General description
160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
920 to 960
32 32
22.
5 27
ACPR (dBc) 41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness Hi...
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