BLF182XR; BLF182XRS Power LDMOS transistor Rev.
1 — 23 July 2015 Objective data sheet 1.
Product profile 1.
1 General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1.
Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 250 Gp (dB) 28 D (%) 72 1.
2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  Industrial, scientif...

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