Part Number
|
BLF25M612 |
Manufacturer
|
NXP |
Description
|
Power LDMOS transistor |
Published
|
Jan 27, 2016 |
Detailed Description
|
BLF25M612; BLF25M612G
Power LDMOS transistor
Rev. 3 — 16 December 2014
Product data sheet
1. Product profile
1.1 Gen...
|
Datasheet
|
BLF25M612
|
Overview
BLF25M612; BLF25M612G
Power LDMOS transistor
Rev.
3 — 16 December 2014
Product data sheet
1.
Product profile
1.
1 General description
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.
Table 1.
Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 12
19
D (%) 60
1.
2 Features and benefits
High efficiency High power gain Excellent ruggedness Excelle...
Similar Datasheet