BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev.
2 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) Gp D IMD3 (MHz) (V) (W) (dB) (%) (dBc) 2-carrier WCDMA 1930 to 1990 30 40 17.
2 27 38[1] ACPR (dBc) 41[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
T...

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