BLF6G21-10G Power LDMOS transistor Rev.
4 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1.
Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 0.
7 18.
5 15 1-carrier W-CDMA 2110 to 2170 28 2 19.
3 31 ACPR (dBc) 50[1] 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Di...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)