BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev.
3 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description A 160 W LDMOS RF power transistor for base station applications.
The transistor can deliver 160 W from 729 MHz to 960 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
Table 1.
Typical performance RF performance at VDS = 50 V in a common-source Class-AB test circuit.
Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) 2-carrier W-CDMA 960 600 50 38 20 D (%) 34 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01% probability on CCDF.
ACPR (dBc) 32[1]...

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