Part Number
|
BLF7G22L-250P |
Manufacturer
|
Ampleon |
Description
|
Power LDMOS transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
...
|
Datasheet
|
BLF7G22L-250P
|
Overview
BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS transistor
Rev.
4 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
1900 28 70
18.
5 31 30[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
1.
2 Features and benefits
Excellent ruggedness High efficiency ...
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