Part Number
|
BLF8G10LS-160V |
Manufacturer
|
Ampleon |
Description
|
Power LDMOS transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLF8G10LS-160V
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General des...
|
Datasheet
|
BLF8G10LS-160V
|
Overview
BLF8G10LS-160V
Power LDMOS transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
925 to 960
1100 30 35
19.
9 30 38[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.
2 Features and benefits
Excellent ruggedness H...
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