Part Number
|
BLF8G10LS-300P |
Manufacturer
|
Ampleon |
Description
|
Power LDMOS transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLF8G10LS-300P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General des...
|
Datasheet
|
BLF8G10LS-300P
|
Overview
BLF8G10LS-300P
Power LDMOS transistor
Rev.
3 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
758 to 803
28 65
20.
5 32
35 [1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits
Excellent ruggedness High efficiency Low thermal resist...
Similar Datasheet