Part Number
|
BLL6H1214-500 |
Manufacturer
|
Ampleon |
Description
|
LDMOS L-band radar power transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Pro...
|
Datasheet
|
BLL6H1214-500
|
Overview
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Rev.
4 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D tr
tf
(GHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1.
2 to 1.
4
50 500 17
50 20
6
1.
2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excelle...
Similar Datasheet