BLL8H0514-25 Power LDMOS transistor Rev.
1 — 9 February 2015 Product data sheet 1.
Product profile 1.
1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) tf (ns) pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.
05 86 1200 to 1400 300 10 50 25 19 10 50 0.
05 86 1.
2 Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ru...

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