Part Number
|
BLL8H0514L-130 |
Manufacturer
|
NXP |
Description
|
LDMOS driver transistor |
Published
|
Mar 5, 2016 |
Detailed Description
|
BLL8H0514L-130; BLL8H0514LS-130
LDMOS driver transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile...
|
Datasheet
|
BLL8H0514L-130
|
Overview
BLL8H0514L-130; BLL8H0514LS-130
LDMOS driver transistor
Rev.
2 — 9 February 2015
Product data sheet
1.
Product profile
1.
1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0
15 8
1200 to 1400 300 10 50 130 17 10 50 0
15 8
1.
2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse f...
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