Part Number
|
BLL9G1214LS-600 |
Manufacturer
|
Ampleon |
Description
|
LDMOS L-band radar power transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLL9G1214L-600; BLL9G1214LS-600
LDMOS L-band radar power transistor
Rev. 1 — 27 November 2017
Product data sheet
1. Pr...
|
Datasheet
|
BLL9G1214LS-600
|
Overview
BLL9G1214L-600; BLL9G1214LS-600
LDMOS L-band radar power transistor
Rev.
1 — 27 November 2017
Product data sheet
1.
Product profile
1.
1 General description
600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.
2 GHz to 1.
4 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo test circuit.
Test signal
f
VDS
PL(3dB)
Gp
D
(GHz)
(V) (W)
(dB)
(%)
pulsed RF
1.
2 to 1.
4
32 600
19 60
1.
2 Features and benefits
High efficiency Excellent ruggedness Designed for L-band operation Excellent thermal stability Easy power control Integrated dual sided ESD protection ...
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