Part Number
|
BLS6G2731-120 |
Manufacturer
|
Ampleon |
Description
|
LDMOS S-band radar power transistor |
Published
|
Apr 26, 2018 |
Detailed Description
|
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Prod...
|
Datasheet
|
BLS6G2731-120
|
Overview
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
Rev.
2 — 1 September 2015
Product data sheet
1.
Product profile
1.
1 General description
120 W LDMOS power transistor intended for radar applications in the 2.
7 GHz to 3.
1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
2.
7 to 3.
1 32
120
13.
5 48
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
Typical pulsed RF performa...
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