BLS7G2933S-150
LDMOS S-band radar power transistor
Rev.
2 — 23 February 2011
Product data sheet
1.
Product profile
1.
1 General description
150 W LDMOS power transistor intended for radar applications in the 2.
9 GHz to 3.
3 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f (GHz)
VDS PL (V) (W)
Gp ηD (dB) (%)
tr (ns)
tf (ns)
pulsed RF
2.
9 to 3.
3 32 150
13.
5 47
20
6
1.
2 Features and benefits
Typical pulsed RF performance at a frequency of 2.
9 GHz to 3.
3 GHz, a supply
voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 150 ...