BLV40N20
N-channel Enhancement Mode Power
MOSFET
• • •
Preliminary SEP.
2009
BVDSS RDS(ON) ID
200V 50mΩ 40A
200V 40A VDMOS ，、， PDP
( TC=25oC )
VDS VGS ID
IDR
( 1) ( 1)
: 1.
PW10us, duty cycle1%
http://www.
belling.
com.
cn
200 + 30 40 160 40 160
V V A A A A
Page 1/3
BLV40N20
( TC=25C )
BVDSS RDS(ON) VGS(th) IDSS IGSS Ciss Coss Crss
- -
VGS=0V, ID=1mA VGS=10V, ID=20A VDS=VGS, ID=250uA VDS=200V, VGS=0V VGS= ± 20V
VDS=25V VGS=0V f = 1MHz
200
2 -
220 0.
047
3 2300 450 80
-
0.
055 4 10
±100 -
V Ω V uA nA pF pF pF
http://www.
belling.
com.
cn
Page 2/3
BLV40N20
TO247
http://www.
belling.
com.
cn
Page 3/3
...