BLV640
N-channel Enhancement Mode Power
MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
200V 0.
18Ω 18A
Description This advanced low
voltage MOSFET is produced using Belling’s proprietary MOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS
ID
IDM
PD
EAS IAR EAR Tj TSDG
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operati...