BLV7N60
N-channel Enhancement Mode Power
MOSFET
• • •
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
600V 1.
0Ω 7A
Description
This advanced high
voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operati...