Part Number
|
BLV99SL |
Manufacturer
|
NXP |
Description
|
UHF power transistor |
Published
|
Mar 23, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99/SL UHF power transistor
Product specification September 1991
Philips Semicond...
|
Datasheet
|
BLV99SL
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99/SL UHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap.
It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band.
All leads are isolated from the mounting base.
PINNING - SOT172D PIN 1 2 3 4 base collector emitter DESCRIPTION emitter WARNING Product and environmental safety - toxic materials
2 3
h...
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