Field Effect Transistor N-Channel, Enhancement Mode
BS170, MMBF170
General Description These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology.
These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
They can be used in most applications requiring up to 500 mA DC.
These products are particularly suited for low
voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Features
• High Density Cell Design for Low RDS(ON) •
Voltage Controlled Small Signal Switch • Rugged and ...