BS807
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features
· · · · · High Breakdown
Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly
SOT-23
A D TOP VIEW G E D G H K J L M S B C
Dim A B C D E G H J K L M
Min 0.
37 1.
19 2.
10 0.
89 0.
45 1.
78 2.
65 0.
013 0.
89 0.
45 0.
076
Max 0.
51 1.
40 2.
50 1.
05 0.
61 2.
05 3.
05 0.
15 1.
10 0.
61 0.
178
Mechanical Data
· · · · · Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S07 Weight: 0.
008 grams (approx.
)
All Dimensions in mm
Maximum Ratings
Drain-Source
Voltage Drain-Gate
Voltage
@ TA = 25°C unless otherwise specified Sym...