BSB012N03LX3 G
OptiMOSTM3 Power-
MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance • Low profile (0.
7 mm) • 100% avalanche tested • 100% Rg Tested • Double-sided cooling • Pb-free plating; RoHS compliant
Product Summary V DS R DS(on),max ID 30 1.
2 180 MG-WDSON-2 V mΩ A
• Compatible with DirectFET® package MX footprint and outline 1) • Qualified according to JEDEC2) for target applications Type BSB012N03LX3 G Package MG-WDSON-2 Outline MX Marking 0103
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditio...