DatasheetsPDF.com

BSC028N06NS

Part Number BSC028N06NS
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Datasheet BSC028N06NS





Overview
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC028N06NS Product Summary VDS RDS(on),max ID Qoss QG(0.
.
10V) 60 2.
8 100 43 37 V mW A nC nC PG-TDSON-8 Type BSC028N06NS Package PG-TDSON-8 Marking 028N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 100 A V GS=10 V, T C=100 °C 83 V GS=10 V, T C=25 °C, R thJA =50K/W 2) 23 Pu...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)