Part Number
|
BSC028N06NS |
Manufacturer
|
Infineon Technologies |
Description
|
Power-Transistor |
Published
|
Nov 12, 2015 |
Detailed Description
|
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
|
Datasheet
|
BSC028N06NS
|
Overview
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSC028N06NS
Product Summary VDS RDS(on),max ID Qoss QG(0.
.
10V)
60 2.
8 100 43 37
V mW A nC nC
PG-TDSON-8
Type BSC028N06NS
Package PG-TDSON-8
Marking 028N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
100 A
V GS=10 V, T C=100 °C
83
V GS=10 V, T C=25 °C, R thJA =50K/W 2)
23
Pu...
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