Part Number
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BSC030P03NS3G |
Manufacturer
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Infineon Technologies AG |
Description
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Power Transistor |
Published
|
Jul 29, 2014 |
Detailed Description
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BSC030P03NS3 G
OptiMOSTM P3 Power-Transistor
Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for...
|
Datasheet
|
BSC030P03NS3G
|
Overview
BSC030P03NS3 G
OptiMOSTM P3 Power-Transistor
Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for target applications • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD 4 kV • applications: battery management, load switching • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID -30 3.
0 -100 PG-TDSON-8 V mΩ A
Type
Package
Marking 030P3NS
Lead free Yes
Halogen free Yes
Packing dry
BSC030P03NS3 G PG-TDSON-8
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C Pulsed drain current Avalanche energy, single pulse ...
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