BSH111BK
55 V, N-channel Trench
MOSFET
26 November 2014
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Low threshold
voltage • Very fast switching • Trench
MOSFET technology • ElectroStatic Discharge (ESD) protection 3 kV HBM
3.
Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Symbol VDS VGS ID
Quick reference data Parameter drain-source
voltage
gate-source
voltage
drain current
Static characteristics
RDSon
drain-source ...