BSP16T1
Preferred Device
High
Voltage Transistors
PNP Silicon
Features
•ăPb-Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector‐Emitter
Voltage
Collector‐Base
Voltage
Emitter‐Base
Voltage
Collector Current Total Device Dissipation @ TA = 25°C
(Note 1)
VCEO VCBO VEBO
IC PD
-300 -350 -6.
0 -100 1.
5
Vdc Vdc Vdc mAdc W
Storage Temperature Range
PD
-65 to
°C
+150
Junction Temperature
TJ 150 °C
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect devic...