CYStech Electronics Corp.
High
Voltage PNP Epitaxial Planar Transistor
Spec.
No.
: C321N3R Issued Date : 2003.
04.
12 Revised Date : Page No.
: 1/4
BTA1722N3
Features
• High Breakdown
Voltage:BVCEO≥-350V • Complementary to BTC4062N3
Symbol
BTA1722N3 SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 225 150 -55~+150 Unit V V V mA mW °C °C
BTA1722N3
CYStek Product Specification
CYStech Electronics Corp.
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