CYStech Electronics Corp.
High
Voltage PNP Epitaxial Planar Transistor
www.
DataSheet4U.
com Spec.
No.
: C309M3
Issued Date : 2003.
06.
30
Revised Date : Page No.
: 1/4
BTA1759M3
Description
• High breakdown
voltage.
(BVCEO=-400V) • Low saturation
voltage, typically VCE(sat) = -0.
07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505M3.
Symbol
BTA1759M3
Outline
SOT-89
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC Pd Limits -400 -400 -6 -300 0.
6 1 (Note 1) 2 (Note 2) 208 125 (Note 1) 62.
5 (Note ...