CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.
DataSheet4U.
com Spec.
No.
: C812J3 Issued Date : 2003.
05.
25 Revised Date : Page No.
: 1/4
BTB1182J3
Features
• Low VCE(sat), VCE(sat)=-0.
7 V (typical), at IC / IB = -2A / -0.
5A • Excellent current gain characteristics • Complementary to BTD1758J3
Symbol
BTB1182J3
Outline
TO-252
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg
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