CYStech Electronics Corp.
High
Voltage NPN Triple Diffused Planar Transistor
BTC3149E3
Spec.
No.
: C663E3 Issued Date : 2012.
02.
13 Revised Date : Page No.
: 1/6
Features
• High
voltage, BVCBO=1600V min.
, BVCEO=800V min.
• Pb-free lead plating package
Symbol
BTC3149E3
Outline
TO-220
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1.
Single Pulse Pw≦300μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg
Limit
1600 800 6 1.
2 3 *1 2 40 -55~+150
Unit
V V V A A
W
°C
...