CYStech Electronics Corp.
High
Voltage NPN Epitaxial Planar Transistor
BTC4505A3
Features
High breakdown
voltage.
(BVCEO = 400V) Low saturation
voltage, typically VCE(sat) = 0.
1V at IC / IB=10mA / 1mA.
Complementary to BTA1759A3 RoHS compliant package Pb-free lead plating package
Spec.
No.
: C210A3-R Issued Date : 2003.
10.
15 Revised Date :2017.
08.
03 Page No.
: 1/6
Symbol
BTC4505A3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd Tj Tstg
BTC4505A3
EBC
Limit
400 4...