High
Voltage Transistor (NPN)
BTC4505N3
Features
High breakdown
voltage.
(BVceo =400V) Low saturation
voltage, typically Vce(sat) =0.
1V at Ic/Ib=10mA/1mA C
COMCHIP
www.
comchiptech.
com
COLLECTOR
3 1
BASE
SOT-23
.
119 (3.
0) .
110 (2.
8)
2
EMITTER
.
020 (0.
5)
Top View
.
056 (1.
40) .
047 (1.
20)
.
006 (0.
15) .
002 (0.
05)
.
037(0.
95) .
037(0.
95)
.
006 (0.
15)max.
.
020 (0.
5)
.
020 (0.
5)
.
103 (2.
6) .
086 (2.
2)
Dimensions in inches (millimeters)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC Pd Tj Tstg
Limit
400 400 6 300 0.
225 150 -55~+150
MDS0405003A
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