CYStech Electronics Corp.
High
Voltage NPN Epitaxial Planar Transistor
Spec.
No.
: C210T3 com Issued Date : 2004.
07.
01 Revised Date : 2004.
07.
22 Page No.
: 1/4
BTC4620T3
Features
• High breakdown
voltage.
(BVCEO =350V) • Low saturation
voltage, typically VCE(sat) =0.
1V at IC/IB=10mA/1mA.
• Complementary to BTA1776T3
Symbol
BTC4620T3
Outline
TO-126
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj ...