CYStech Electronics Corp.
High
Voltage NPN Epitaxial Planar Transistor
BTC4621K3
Spec.
No.
: C210K3 Issued Date : 2006.
12.
08 Revised Date : Page No.
: 1/4
Features
• High breakdown
voltage.
(BVCEO =350V) • Low saturation
voltage, typically VCE(sat) =0.
1V at IC/IB=10mA/1mA.
• Pb-free package
Symbol
BTC4621K3
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃)
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PD Tj Tstg
BTC4621K3
Limit
350 350 6 100 200 50 1 150 -55~+150
Unit
V V V
mA...