CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805AT3
Spec.
No.
: C820T3 Issued Date : 2017.
01.
10 Revised Date : 2018.
07.
02 Page No.
: 1/ 7
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation
voltage.
Features
Very low collector-to-emitter saturation
voltage Fast switching speed High current gain characteristic Large current capability Pb-free lead plating package
Applications
CCFL drivers
Voltage regulators Relay drivers High efficiency low
voltage switching applications
Symbol
BTD1805AT3
Outline
TO-...