CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805F3
Spec.
No.
: C820F3 Issued Date : 2011.
12.
01 Revised Date : 2019.
11.
26 Page No.
: 1/ 10
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation
voltage.
Features
Very low collector-to-emitter saturation
voltage Fast switching speed High current gain characteristic Large current capability RoHS compliant package
Applications
CCFL drivers
Voltage regulators Relay drivers High efficiency low
voltage switching applications
Ordering Information
Device BTD1805F3-...