CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1816I3
BVCEO IC
Spec.
No.
: C821I3 Issued Date : 2005.
10.
05 Revised Date :2017.
05.
12 Page No.
: 1/6
100V 4A
Features
• Low collector-to-emitter saturation
voltage • High-speed switching • Large current capability • Good linearity of hFE • High fT • RoHS compliant package
Applications
• Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.
Symbol
BTD1816I3
Outline
TO-251
B：Base C：Collector E：Emitter
BB CC E
Ordering Information
Device BTD1816I3-0-UA-G
Package
TO-251 (Pb-free lead plating and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Envir...