CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1816J3
BVCEO IC
Spec.
No.
: C821J3 Issued Date : 2005.
03.
29 Revised Date :2017.
06.
16 Page No.
: 1/8
100V 4A
Features
• Low collector-to-emitter saturation
voltage • High-speed switching • Large current capability • Good linearity of hFE • High fT • RoHS compliant package
Applications
• Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.
Symbol
BTD1816J3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
B CE
Ordering Information
Device BTD1816J3-X-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Enviro...