CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec.
No.
: C855D3 Issued Date : 2004.
09.
21 Revised Date :2005.
04.
20 Page No.
: 1/4
BTD1857AD3
Description
• High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package
Symbol
BTD1857AD3
Outline
TO-126ML
B：Base C：Collector E：Emitter E E CC B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.
5 3 1 20 150 -55~+150 Unit V V V A A W W °C °...