CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3G
BVCEO IC RCESAT
Spec.
No.
: C855J3G Issued Date : 2004.
10.
04 Revised Date :2010.
12.
08 Page No.
: 1/7
160V 1.
5A 310mΩ
Description
• High BVCEO • High current capability • Complementary to BTB1236AJ3G • RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg...