CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AL3
Spec.
No.
: C855L3 Issued Date : 2005.
06.
17 Revised Date : 2010.
12.
31 Page No.
: 1/7
Description
• High BVCEO • High current capability • Complementary to BTB1236AL3 • Pb-free lead plating package
Symbol
BTD1857AL3
B：Base C：Collector E：Emitter
Outline
SOT-223 C
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PD Tj Tstg
Limits
180 160
5 1.
5 3 5 150 -55~+150
Unit
V V V A A W °C °C
BTD1857AL3
CY...